NX3020NAKV,115

$0.36

Description：MOSFET 2N-CH 30V 0.2A SOT666
Series：-

SKU:d6f28151598a Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.2A SOT666
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：200mA
Rds On (Max) @ Id, Vgs：4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：13pF @ 10V
Power - Max：375mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-666
Grade：-
Qualification：-

Download product information

NX3020NAKV,115

Overview

The NX3020NAKV,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT666 package. It features a drain-source voltage of 30 V and a continuous drain current of 200 mA per transistor at 25 °C. The on-state resistance is typically 2.7 Ω at VGS = 10 V. Total power dissipation is rated at 375 mW. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

Very fast switching capability enabled by Trench MOSFET technology
Integrated ElectroStatic Discharge (ESD) protection
Low threshold voltage for efficient drive requirements

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for applications requiring compact dual N-channel switching with low on-resistance. Ensure thermal management aligns with the 375 mW total power dissipation limit. Verify that the 30 V breakdown voltage meets circuit requirements. Confirm compatibility with the SOT666 footprint during PCB layout.

Part Context

This device belongs to Nexperia's small-signal MOSFET portfolio designed for surface-mount applications. It utilizes advanced Trench technology to achieve high performance in a minimal footprint. The SOT666 package provides ultra-small dimensions suitable for space-constrained designs compared to standard transistor packages.

Replacement Considerations

Check for pin-compatible alternatives within the same series if supply constraints exist. Verify that substitute parts maintain identical RDSon characteristics and package dimensions to ensure seamless integration without redesigning the printed-circuit board layout.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.