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The NXH003P120M3F2PTNG is a Silicon Carbide (SiC) power module from the EliteSiC series, featuring a 3 mΩ M3S MOSFET half-bridge topology in an F2 package. It includes a thermistor and utilizes Si3N4 Direct Bonded Copper (DBC). The device supports a Drain-Source Voltage of 1200 V and a Continuous Drain Current of 435 A at Tc = 80 °C. Maximum Power Dissipation is rated at 1482 W. Operating junction temperatures range from -40 °C to 175 °C. The module employs press-fit pins with pre-applied thermal interface material.
Verify the specific ordering suffix against official documentation to confirm exact specifications. Confirm RoHS compliance status and packaging details directly with authorized distributors or the manufacturer before placing orders. Ensure compatibility with existing system requirements.
Select this component based on its 1200 V rating and low on-resistance for high-efficiency switching applications. Consider the thermal resistance characteristics and the integrated thermistor for accurate thermal management. Verify that the press-fit mounting method aligns with the target PCB design constraints.
This part belongs to the EliteSiC family of silicon carbide modules by onsemi. It represents a high-power density solution designed for demanding power conversion environments. The F2 package provides a standardized form factor for integration into various industrial and automotive power systems.
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 1200 V rating, current capacity, and package dimensions. Verify electrical characteristics and thermal properties to maintain system performance.