NXH008P120M3F1PTG

$69.45

Description：MOSFET 2N-CH 1200V 145A
Series：-

SKU:34bdc1014ebc Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 145A
Series：-
Mfr：onsemi
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：145A (Tc)
Rds On (Max) @ Id, Vgs：10.9mOhm @ 120A, 18V
Vgs(th) (Max) @ Id：4.4V @ 60mA
Gate Charge (Qg) (Max) @ Vgs：419nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：8334pF @ 800V
Power - Max：382W (Tj)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

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NXH008P120M3F1PTG

Overview

The NXH008P120M3F1PTG is a Silicon Carbide (SiC) MOSFET module featuring an 8 mΩ, 1200 V M3S half-bridge topology in an F1 package. It includes a thermistor and utilizes press-fit pins with pre-applied thermal interface material. The device supports a continuous drain current of 145 A at Tc = 80°C and handles a pulsed drain current of 436 A. Maximum power dissipation reaches 382 W at TJ = 175°C. Operating junction temperatures range from -40°C to 150°C, with a maximum rating of 175°C. Electrical characteristics include a typical RDS(on) of 7.7 mΩ at 25°C and a gate-source voltage limit of +22/-10 V.

Feature Summary

Integrated 8 mΩ SiC M3S half-bridge topology for high-efficiency power conversion
Built-in NTC thermistor for precise junction temperature monitoring
Press-fit pin configuration with pre-applied thermal interface material for simplified assembly

Applications

Solar Inverters
Uninterruptible Power Supplies
Electric Vehicle Charging Stations
Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix 'T' confirms the inclusion of pre-applied thermal interface material. Confirm compliance with RoHS standards and halide-free requirements. Ensure the selected variant matches the required mounting style and packaging quantity for integration into the target design.

Selection Notes

Select this component when a low on-resistance half-bridge solution is required for high-voltage applications. Consider the thermal resistance values and operating temperature limits to ensure adequate heatsinking. Verify that the gate drive circuitry accommodates the specified threshold voltage and total gate charge parameters.

Part Context

This part belongs to the EliteSiC family of silicon carbide modules from onsemi. It represents the M3S generation of technology, designed to offer improved performance over previous iterations. The F1 package provides a standardized form factor for various power levels within the series.