NXH010P120M3F1PTG

Overview

The NXH010P120M3F1PTG is a Silicon Carbide (SiC) power module featuring a 10 mΩ, 1200 V M3S MOSFET half-bridge topology in an F1 package. It includes a thermistor and utilizes press-fit pins for mounting. The device supports a continuous drain current of 105 A at Tc = 80°C and handles a pulsed drain current of 316 A. Maximum power dissipation reaches 272 W at TJ = 175°C. Operating junction temperature ranges from -40°C to 150°C. Electrical characteristics include a typical RDS(on) of 10.5 mΩ at 25°C and a gate-source voltage range of +22/-10 V.

Feature Summary

• Integrated thermistor for thermal monitoring
• Press-fit pin technology for secure board connection
• Pre-applied thermal interface material included

Applications

• Solar Inverter
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power

Procurement Notes

Verify the specific ordering suffix 'T' confirms the inclusion of pre-applied thermal interface material. Confirm assembly and test site codes match project requirements. Ensure compliance with RoHS and halide-free standards as specified in the datasheet documentation.

Selection Notes

Select this component for high-efficiency switching applications requiring robust thermal performance. Verify that the system design accommodates the 1200 V blocking capability and 105 A continuous current rating. Ensure the PCB layout supports the press-fit installation method and provides adequate clearance for the F1 package dimensions.

Part Context

This part belongs to the EliteSiC M3S series of silicon carbide modules. It represents a half-bridge configuration designed for high-power density applications. The F1 package offers a compact form factor suitable for modern power electronics designs requiring reliable operation under high thermal stress.

Replacement Considerations

NXH010P120M3F1PG is the equivalent variant without pre-applied thermal interface material.