NXH010P120MNF1PNG

$98.84

Description：MOSFET 2N-CH 1200V 114A
Series：-

SKU:0804cb079f60 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 114A
Series：-
Mfr：onsemi
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：114A (Tc)
Rds On (Max) @ Id, Vgs：14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id：4.3V @ 40mA
Gate Charge (Qg) (Max) @ Vgs：454nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：4707pF @ 800V
Power - Max：250W (Tj)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

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NXH010P120MNF1PNG

Overview

The NXH010P120MNF1PNG is a Silicon Carbide (SiC) MOSFET module from the EliteSiC series, manufactured by onsemi. It features a PIM F1 half-bridge configuration with an integrated NTC thermistor. The device supports a maximum reverse voltage of 1200 V and exhibits a typical on-resistance of 10 mOhm. It operates within a temperature range of -40°C to +150°C and utilizes press-fit installation. The gate-source voltage limits are specified at -15 V and +25 V. Packaged in trays containing 28 units, this component is designed for high-efficiency power conversion applications.

Feature Summary

EliteSiC technology utilizing Silicon Carbide for enhanced thermal performance
Integrated NTC thermistor for precise internal temperature monitoring
Half-bridge topology optimized for compact power designs

Applications

Electric vehicle charging infrastructure
Energy storage systems
Industrial motor drives

Procurement Notes

Verify the specific suffix PNG against official datasheets to confirm package or material variations. Ensure compatibility with press-fit assembly processes. Confirm RoHS compliance status through current manufacturer documentation before integration into regulated products.

Selection Notes

Select this module for applications requiring low conduction losses and high thermal stability. The 10 mOhm resistance suits high-current half-bridge topologies. Verify that the system design accommodates the 1200 V blocking capability and the specific gate drive voltage requirements of -15 V to +25 V.

Part Context

This part belongs to the NXH010P120MNF1 family of EliteSiC modules. It shares the core electrical characteristics with variants like NXH010P120MNF1PTG but may differ in packaging or terminal configuration as indicated by the suffix. It represents a generation of SiC modules designed for robust industrial and automotive environments.

Replacement Considerations

NXH010P120MNF1PTG is listed as a parameter-equivalent alternative within the same product family. Verify pinout and mechanical dimensions before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.