NXH015P120M3F1PTG

Overview

The NXH015P120M3F1PTG is a Silicon Carbide (SiC) MOSFET module featuring a 15 mΩ, 1200 V half-bridge topology in an F1 package. It includes a thermistor and utilizes press-fit pins with pre-applied thermal interface material. The device supports a continuous drain current of 77 A at Tc = 80°C and operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a maximum power dissipation of 198 W, a gate-source voltage range of +22/-10 V, and a threshold voltage of 2.4 V. Switching characteristics at TJ = 25°C show a turn-on delay of 25 ns, rise time of 9 ns, turn-off delay of 94 ns, and fall time of 8 ns.

Feature Summary

• Integrated SiC MOSFET half-bridge with built-in thermistor for thermal monitoring
• Press-fit pin configuration designed for direct PCB mounting without soldering
• Pre-applied thermal interface material included for simplified heatsink integration

Applications

• Solar Inverter systems
• Uninterruptible Power Supplies (UPS)
• Electric Vehicle Charging Stations
• Industrial Power applications

Procurement Notes

Verify the specific ordering suffix PTG to confirm the inclusion of pre-applied thermal interface material and press-fit pins. Ensure compatibility with the F1 package dimensions and Case 180BW outline before procurement. Confirm RoHS compliance and halide-free status requirements against project specifications.

Selection Notes

Select this component for high-voltage applications requiring low on-resistance and fast switching speeds. Evaluate the thermal resistance values and maximum power dissipation limits against the expected operating junction temperatures. Consider the Kelvin source connections for accurate gate drive control and reduced parasitic inductance effects.

Part Context

This part belongs to the EliteSiC M3S series from onsemi, which offers various Rds(on) options including 8 mΩ, 10 mΩ, and 30 mΩ variants. These modules are designed for high-efficiency power conversion, leveraging silicon carbide technology to minimize switching losses compared to traditional silicon devices.

Replacement Considerations

Check datasheets for other NXH015P120M3F1 variants to determine if different packaging or thermal interface options are required. Verify pinout compatibility when considering alternative manufacturers' 1200V SiC half-bridge modules.