NXH020P120MNF1PG

$89.21

Description：MOSFET 2N-CH 1200V 51A
Series：-

SKU:db25bd392e16 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 51A
Series：-
Mfr：onsemi
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：51A (Tc)
Rds On (Max) @ Id, Vgs：30mOhm @ 50A, 20V
Vgs(th) (Max) @ Id：4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs：213.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：2420pF @ 800V
Power - Max：119W (Tj)
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

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NXH020P120MNF1PG

Overview

The NXH020P120MNF1PG is a Silicon Carbide (SiC) MOSFET module from onsemi's EliteSiC F1 series. It features a half-bridge configuration with two N-channel devices housed in a press-fit package. The component supports a maximum drain-source voltage of 1200 V and delivers a continuous drain current of 154 A at 25°C case temperature. Its typical on-resistance is 20 mΩ at 18 V gate drive. The module operates within a junction temperature range of -40°C to 175°C and utilizes a baseplate mounting style for thermal management.

Feature Summary

Utilizes EliteSiC F1 technology for high-efficiency power conversion
Half-bridge topology integrates two N-channel SiC MOSFETs
Designed for press-fit installation to ensure robust mechanical connection

Applications

Traction inverters for electric vehicles
On-board chargers (OBC)
DC-DC converters
Industrial motor drives

Procurement Notes

Verify the specific suffix PG against official datasheets to confirm pinout and packaging details. Ensure compatibility with existing press-fit tooling and thermal interface materials. Cross-reference the manufacturer's latest revision history to validate electrical parameters before finalizing procurement specifications.

Selection Notes

Select this module for applications requiring low switching losses and high thermal stability. Confirm that the gate driver can supply the required 18 V drive voltage to achieve the specified 20 mΩ on-resistance. Evaluate the system's thermal design to maintain the junction temperature within the 175°C limit under peak load conditions.

Part Context

This part belongs to the NXH020P120MNF1 family, which includes variants such as NXH020P120MNF1PTG. These modules are engineered for high-power density applications where silicon IGBT limitations are exceeded. The F1 series represents an evolution in SiC packaging and performance optimization for automotive and industrial sectors.