NXH020P120MNF1PTG

Overview

The NXH020P120MNF1PTG is a Silicon Carbide (SiC) half-bridge module from onsemi's EliteSiC series. It features an N-channel configuration with a 1200V reverse voltage rating and a maximum continuous drain current of 149A at 25°C. The device exhibits a typical on-resistance of 20mΩ and a forward voltage of 6V. Electrical characteristics include a gate-source voltage range of -15V to +25V, a maximum power dissipation of 352W, and a typical gate charge of 546.4nC at 20V. It operates within a temperature range of -40°C to +175°C and utilizes a press-fit installation style in the F2-VIENNA 180BZ package.

Feature Summary

• Utilizes Silicon Carbide technology for high-temperature operation up to 175°C
• Integrated half-bridge topology simplifies circuit design
• Press-fit termination method ensures robust mechanical connection

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Solar inverters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and terminal configuration. Ensure that the required thermal interface materials are compatible with the press-fit mounting style specified for this component. Cross-reference the manufacturer datasheet for any recent product change notices or environmental compliance updates prior to finalizing procurement orders.

Selection Notes

Select this component when designing systems requiring high-voltage SiC performance with integrated half-bridge functionality. The 149A current rating and low on-resistance make it suitable for high-efficiency power conversion applications. Verify that the driving circuitry can support the specified gate voltage limits and switching speeds associated with the 546.4nC gate charge characteristic.

Part Context

This part belongs to the NXH020P120MNF1 series of EliteSiC modules. It shares the same core electrical specifications as the NXH020P120MNF1PG variant, differing primarily in packaging or terminal configuration details defined by the manufacturer. Both variants serve the same high-power semiconductor market segment.

Replacement Considerations

NXH020P120MNF1PG is listed as a parameter-equivalent alternative.