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Product Detailed Parameters
- Description：MOSFET 4N-CH 1200V 30A 22PIM
- Series：-
- Mfr：onsemi
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：56mOhm @ 25A, 20V
- Vgs(th) (Max) @ Id：4.3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：122.1nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：1505pF @ 800V
- Power - Max：74W (Tj)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：22-PIM (33.8x42.5)
- Grade：-
- Qualification：-
Download product information
Overview
The NXH040F120MNF1PTG is a Silicon Carbide (SiC) MOSFET module from onsemi's EliteSiC series, configured as a four-channel N-Channel full bridge. It features a 1200V reverse voltage rating and utilizes press-fit installation for secure mounting. The device operates within a temperature range of -40°C to +150°C and supports gate-source voltages between -15V and +25V. Packaged in a 22-PIM form factor measuring 33.8x42.5 mm, it is designed for high-power discrete applications requiring robust thermal and electrical performance.
Feature Summary
- Four-channel N-Channel configuration enabling full bridge topology
- Silicon Carbide technology for enhanced high-temperature operation
- Press-fit mounting style for reliable mechanical connection
Applications
- High-power DC-DC converters
- Industrial motor drives
- Uninterruptible power supplies
Procurement Notes
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the suffix PTG corresponds to the required tray packaging format. Ensure compatibility with existing thermal management systems and press-fit tooling specifications. Cross-reference datasheet revisions to confirm pinout consistency.
Selection Notes
Select this component when a four-channel SiC full bridge is required for high-voltage applications. Compare the 1200V rating and package dimensions against system constraints. Evaluate thermal resistance characteristics relative to the specific heatsink design. Verify that the press-fit requirement aligns with the assembly process capabilities.
Part Context
This module belongs to the NXH040F120MNF1 family of EliteSiC products. It shares the same core silicon and package outline as variants like NXH040F120MNF1PG, differing primarily in packaging or trailing identifiers. The F1 designation indicates the specific module generation and internal architecture common to this product line.
Replacement Considerations
NXH040F120MNF1PG is a parameter-equivalent alternative within the same family. Verify if the PG suffix denotes a different packaging type while maintaining identical electrical performance. No other cross-manufacturer substitutes are confirmed in public data.
