NXH040P120MNF1PG

Overview

The NXH040P120MNF1PG is a Silicon Carbide (SiC) MOSFET module from onsemi's EliteSiC series, configured as a half-bridge. It features a 1200 V reverse voltage rating and a typical on-resistance of 40 mOhm. The device utilizes press-fit installation and operates within a temperature range of -40°C to +150°C. Gate-source voltage limits are specified at -15 V and +25 V. The module is packaged in trays with a standard factory quantity of 28 units.

Feature Summary

• EliteSiC technology for high-performance switching
• Integrated NTC thermistor for thermal monitoring
• Press-fit mounting for secure connection

Applications

• EV charging infrastructure
• Energy storage systems
• Industrial motor drives

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and terminal configuration. Ensure compatibility with press-fit assembly tools and verify RoHS compliance status through current manufacturer declarations before procurement.

Selection Notes

Select this component for applications requiring low conduction losses and high thermal stability. Compare the 40 mOhm resistance against system efficiency targets. Confirm that the half-bridge topology matches the circuit design requirements and that the operating voltage remains within the 1200 V limit.

Part Context

This part belongs to the NXH040P120MNF1 family of SiC modules. It shares the same core electrical specifications and physical dimensions with variants such as NXH040P120MNF1PTG, differing primarily in packaging or terminal style details defined by the manufacturer.

Replacement Considerations

NXH040P120MNF1PTG is a parameter-equivalent alternative within the same product family. Verify pinout and mechanical fit before substitution.