NXH100B120H3Q0PG

Overview

The NXH100B120H3Q0PG is a trench field-stop IGBT module from onsemi, configured as two independent switches within a 22-pin Q0BOOST package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.3 V under standard test conditions. With a power dissipation rating of 186 W, it operates across a junction temperature range of -40°C to +150°C.

Feature Summary

• Utilizes trench field-stop technology for optimized switching performance and low conduction losses.
• Provides dual independent configurations within a compact surface-mountable Q0BOOST footprint.
• Designed for robust thermal management with a high maximum operating junction temperature.

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency welding equipment

Procurement Notes

Verify the specific suffix PG against the official datasheet to confirm pinout compatibility and thermal interface specifications. Ensure that the ordering information matches the exact electrical ratings required for the target circuit design before finalizing procurement.

Selection Notes

Select this component when a 1200 V rating and approximately 50 A continuous current are required in a dual-switch configuration. Consider the 186 W power dissipation limit and the Q0BOOST package dimensions during the mechanical layout and thermal design phase.

Part Context

This part belongs to the NXH100 series of IGBT modules, which are engineered for medium-power applications. The Q0BOOST packaging allows for efficient mounting on printed circuit boards while maintaining necessary isolation and thermal conductivity for industrial environments.

Replacement Considerations

NXH100B120H3Q0SG is an alternative variant within the same family. Verify pin compatibility and thermal characteristics before substitution.