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The NXH350N100H4Q2F2P1G is a three-phase inverter IGBT module from onsemi, utilizing trench field-stop technology. It features a Q2PACK (93x47) surface-mount package with 42 terminals. The device supports a maximum collector-emitter voltage of 1000 V and offers continuous collector currents ranging from 298 A to 303 A at 25°C. Saturation voltages are specified between 1.63 V and 1.75 V. Power dissipation capabilities vary from 276 W to 731 W depending on operating conditions. The module operates within a junction temperature range of -40°C to +150°C or +175°C.
Verify the specific suffix against official datasheets to confirm thermal characteristics and pinout compatibility. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure ordering quantities align with standard factory packaging requirements to avoid handling variations.
Select this module for applications requiring high current density in a surface-mount form factor. Evaluate thermal management solutions based on the specific power dissipation ratings provided in the electrical specifications. Verify gate drive voltage compatibility with the stated saturation voltage parameters.
This component belongs to the NXH350 series of IGBT modules from onsemi. The series focuses on high-power density solutions using mixed Si/SiC technologies. It serves as a key element in modern power conversion systems requiring robust three-phase inversion capabilities.
Consult official substitution guides for compatible alternatives. Verify pinout and thermal interface dimensions match existing board layouts when considering cross-model replacements.