NXV08H250DPT2

$43.24

Description：MOSFET 4N-CH 80V APM17-MFA
Series：-

SKU:647aa7b55e3e Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 4N-CH 80V APM17-MFA
Series：-
Mfr：onsemi
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：4 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：80V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V
Vgs(th) (Max) @ Id：4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：320nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：24350pF @ 40V
Power - Max：-
Operating Temperature：-40°C ~ 125°C
Mounting Type：Through Hole
Package / Case：17-PowerDIP Module (2.020", 51.30mm)
Supplier Device Package：APM17-MFA
Grade：Automotive
Qualification：AEC-Q101

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NXV08H250DPT2

Overview

The NXV08H250DPT2 is an automotive power MOSFET module featuring a two-phase configuration within an APM17-MFA package. It integrates four N-channel bare die MOSFETs with a maximum drain-source voltage of 80 V and a continuous drain current rating of 160 A at 25°C. The high-side FETs exhibit a typical on-resistance of 0.71 mΩ, while the low-side FETs show 0.56 mΩ. The module includes integrated NTC thermistors for temperature sensing and snubber components. It operates within a junction temperature range up to 175°C and meets AQG324 automotive qualification standards.

Feature Summary

Two-phase MOSFET architecture allowing half-bridge utilization by combining phase output terminals
Electrically isolated DBC substrate designed for low thermal resistance from junction to case
Integrated NTC thermistors and snubber circuits for enhanced monitoring and protection
Full serialization capability ensuring complete traceability throughout the supply chain

Applications

48 V inverter systems
48 V traction applications
Automotive electric compressor drives

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure that the procurement channel provides valid traceability records required for automotive assembly processes. Confirm that the delivered units match the exact part number designation without unauthorized modifications or generic substitutions.

Selection Notes

Select this component for designs requiring compact integration of dual-phase switching elements in 48 V architectures. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the gate charge characteristics when designing driver circuits to ensure optimal switching performance and minimize dynamic losses during operation.

Part Context

This device belongs to onsemi's automotive power module portfolio, specifically engineered for electrified vehicle platforms. It utilizes advanced silicon technology packaged in the MOD17 form factor to support high-current density applications. The module is designed to replace discrete solutions, thereby reducing board space and simplifying assembly workflows for OEM manufacturers.