NXV08H350XT1

Overview

The NXV08H350XT1 is an automotive power MOSFET module manufactured by onsemi. It features a two-phase configuration with four N-channel MOSFETs, offering a drain-to-source voltage of 80 V and a maximum junction temperature of 175 °C. The module integrates snubber components (15 nF capacitors and 1 Ω resistors) and dual NTC thermistors for thermal monitoring. Electrical characteristics include a typical RDS(ON) of 0.757 mΩ for high-side FETs and 0.549 mΩ for low-side FETs at 25 °C. Total gate charge is typically 320 nC, with switching times measured at 462 ns turn-on and 672 ns turn-off under specific test conditions.

Feature Summary

• Two-phase MOSFET module architecture allowing flexible half-bridge configurations
• Electrically isolated DBC substrate designed to minimize thermal resistance
• Integrated snubber network comprising discrete capacitors and resistors
• Dual NTC thermistors embedded within the module for precise thermal sensing

Applications

• 48 V inverter systems
• 48 V traction applications

Procurement Notes

Verify the ordering suffix XT1 corresponds to tube packing and APM17-MDC packaging. Confirm RoHS compliance and Pb-free status as stated in the datasheet. Ensure the operating ambient temperature range of -40 to 125 °C meets system requirements. Check for AQG324 qualification status if automotive reliability standards are mandatory for the application.

Selection Notes

Select this module for designs requiring compact integration of power switches and passive snubbers. Evaluate the thermal resistance of 0.21 °C/W for heat sink sizing. Consider the 80 V rating for 48 V nominal systems. Verify that the 175 °C junction temperature capability aligns with the expected thermal environment and duty cycles of the target application.

Part Context

This component belongs to the NXV08H series of automotive power modules from onsemi. It utilizes bare die MOSFETs mounted on a Direct Bonded Copper (DBC) substrate. The module is designed to replace discrete solutions, reducing board space and parasitic inductance. It is part of onsemi's portfolio aimed at improving vehicle fuel efficiency through efficient power conversion.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support or authorized distributors for cross-reference information regarding equivalent two-phase 80 V automotive MOSFET modules.