NXV08H400XT2

NXV08H400XT2

$44.85
  • Description:MOSFET 4N-CH 80V APM17-MDA
  • Series:-

SKU:5f6d98dfb997 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 80V APM17-MDA
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):80V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:0.765mOhm @ 160A, 12V, 0.710mOhm @ 160A, 12V
  • Vgs(th) (Max) @ Id:4.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:502nC @ 12V
  • Input Capacitance (Ciss) (Max) @ Vds:30150pF @ 40V
  • Power - Max:-
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:17-PowerDIP Module (1.778", 45.15mm)
  • Supplier Device Package:APM17-MDA
  • Grade:Automotive
  • Qualification:AEC-Q101

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NXV08H400XT2

Overview

The NXV08H400XT2 is a two-phase automotive power MOSFET module from onsemi, housed in an APM17-MDA package. It features four bare die MOSFETs rated for 80 V drain-to-source voltage and ±20 V gate-to-source voltage. The module integrates two NTC thermistors and snubber components (capacitors and resistors). Electrical characteristics include a pure RDS(ON) of 0.58 mΩ maximum at 25°C and 160 A. Thermal resistance (Rthjc) is 0.19 °C/W. The device operates within a junction temperature range up to 175°C and is qualified to AQG324 standards.

Feature Summary

  • Two-phase configuration with electrically isolated DBC substrate for low thermal resistance
  • Integrated NTC thermistors and snubber circuits for system monitoring and protection
  • Module serialization providing full traceability throughout the supply chain
  • AQG324 qualification with internal components meeting AEC-Q101 and AEC-Q200 standards

Applications

  • 48 V Inverter systems
  • 48 V Traction applications
  • Half-bridge configurations by combining phase output terminals

Procurement Notes

Verify the specific ordering suffix XT2 against the official datasheet to confirm the tube packing method and exact component specifications. Ensure that the required operating ambient temperature range of -40 to 125°C aligns with the target application environment before finalizing procurement decisions.

Selection Notes

Select this module for designs requiring compact integration of two phases with built-in thermal sensing. The low total module resistance and low inductance design support efficient operation. Verify that the mounting torque requirements of 0.7 N·m are compatible with the mechanical assembly constraints of the heat sink interface.

Part Context

This component belongs to the NXV series of automotive power modules designed for traction and inverter applications. It utilizes silicon technology and is part of onsemi's portfolio aimed at reducing vehicle fuel consumption through improved system efficiency. The module replaces discrete solutions by integrating multiple power switches and passive components into a single footprint.

Replacement Considerations

The NXV08H400XT1 is a related variant within the same product family. Confirm pinout compatibility and electrical parameter equivalence before substitution. Verify if the specific packaging or serial number format differences impact the assembly process.

FAQ

Can this module be used as a half-bridge?

Yes, the module can be configured as a half-bridge MOSFET module by combining the two phase output power terminals.

What is the maximum junction temperature?

The maximum junction temperature (TJ) for the NXV08H400XT2 is 175°C.

Does the module include thermal monitoring?

Yes, the module includes two integrated NTC thermistors (NTC1 and NTC2) for temperature sensing.

NXV08H400XT2NXV08H400XT2
$44.85
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