PBHV8110DH-AU_R1_000A1

Single Bipolar Transistors Overview

The PBHV8110DH-AU_R1_000A1 is a silicon NPN epitaxial transistor in an SOT-89 package. It features a collector-emitter voltage (VCEO) of 100 V and a continuous collector current (IC) of 1 A. The device supports a peak collector current (ICP) of 3 A with a power dissipation (PD) of 1.4 W at 25°C. Key electrical parameters include a maximum DC current gain (hFE) of 330, a transition frequency (fT) of 100 MHz, and a low collector-emitter saturation voltage (VCE(sat)) of 0.35 V max at Ic/Ib = 500mA/50mA. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching performance
• High collector current capability up to 1 A
• Excellent DC current gain characteristics
• Qualified for automotive applications under AEC-Q101 standards

Single Bipolar Transistors Applications

• Automotive electronic circuits
• General-purpose switching applications
• Power management modules

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm packaging details and compliance status. Ensure the component meets AEC-Q101 requirements if used in automotive contexts. Confirm RoHS 2.0 and IEC61249 green compound specifications during sourcing. Cross-reference datasheet revision REV.01 for accurate thermal and electrical limits before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling within a compact SOT-89 footprint. Consider the 1.4 W power dissipation limit and 89°C/W thermal resistance for adequate heat sinking. Verify that the 100 V breakdown voltage aligns with circuit operating conditions. Evaluate the hFE range of 40 to 330 for base drive requirements in switching or amplification stages.

Single Bipolar Transistors Part Context

This part belongs to the PBHV8110 series of low Vce(sat) transistors manufactured by Panjit International Inc. It serves as the NPN counterpart to the PBHV9110DH-AU PNP complement. The device utilizes silicon epitaxial technology and is designed for robust performance in standard surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The official PNP complement is the PBHV9110DH-AU. No other direct substitutes are documented in the provided datasheet.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum VCE(sat) is 0.35 V when tested at a collector current of 500 mA and a base current of 50 mA.

Is this component suitable for automotive use?

Yes, the PBHV8110DH-AU is qualified according to the AEC-Q101 standard.

What is the transition frequency of the transistor?

The transition frequency (fT) is specified as 100 MHz under test conditions of VCE=5V and IE=-50mA.