PBSS5350T-QR

Single Bipolar Transistors Overview

The Nexperia PBSS5350T-QR is a PNP low VCEsat transistor housed in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package. It features a collector-emitter voltage of -50 V and a continuous collector current of -2 A, with a repetitive peak collector current capability of -3 A under pulsed conditions. The device exhibits a typical collector-emitter saturation resistance of 90 mΩ at -2 A collector current. Qualified according to the AEC-Q101 standard, it supports an operating junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage and corresponding low on-resistance for improved efficiency
• High collector current capability suitable for demanding switching applications
• Qualified according to AEC-Q101 automotive standards for reliability

Single Bipolar Transistors Applications

• Power management applications
• Low and medium power DC/DC converters
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out (LDO)

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '115' or 'QR' against the manufacturer's official documentation to confirm packaging details such as reel size or tape width. Ensure the component matches the required AEC-Q101 qualification status if used in automotive contexts. Cross-reference the datasheet revision date to confirm the most recent electrical characteristics and thermal limits are applied during design validation.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP switch with high current handling and low saturation voltage is required. The SOT23 package offers space efficiency for dense PCB layouts. Consider the thermal resistance values provided for different PCB mounting configurations to ensure adequate heat dissipation. Verify that the base drive current requirements align with the specified hFE characteristics for optimal saturation performance.

Single Bipolar Transistors Part Context

This part belongs to the PBSS5350 series of low VCEsat transistors designed for efficient power switching. The NPN complement for this device is the PBSS4350T-Q. The series is engineered to reduce heat generation through lower saturation voltages, making it suitable for battery-driven devices and portable electronics where power efficiency is critical.

Single Bipolar Transistors Replacement Considerations

The NPN complement is PBSS4350T-Q. No direct cross-brand substitutes are confirmed in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current is -3 A under pulsed conditions with a pulse width of 100 ms or less and a duty cycle of 0.25 or less.

Is this transistor qualified for automotive use?

Yes, the PBSS5350T-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the pin configuration for the SOT23 package?

Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.