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Product Detailed Parameters
- Description：IGBT FIELD STOP 650V WAFER
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Wafer
- Grade：-
- Qualification：-
Download product information
Overview
The PCFG40T65SQF is a bare die Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, utilizing fourth-generation field stop technology. It features a collector-emitter voltage of 650 V and a typical saturation voltage of 1.6 V at 40 A. The device supports an operating junction temperature range from -40°C to +175°C with a maximum pulsed collector current of 160 A. Key electrical parameters include a total gate charge of 80 nC and an input capacitance of 2620 pF. The die dimensions are 140.94 mm x 140.94 mm, designed for high-current applications requiring low conduction and switching losses.
Feature Summary
- Utilizes novel field stop IGBT technology for optimized performance in solar inverters and UPS systems.
- Features positive temperature coefficient to facilitate easy parallel operation.
- Provides high current capability combined with fast switching characteristics.
- Offers tight parameter distribution for consistent device performance.
Applications
- Solar Inverters
- UPS Systems
Procurement Notes
Verify the specific ordering suffix and shipping method when sourcing this component. The datasheet indicates availability as sawn wafers on tape. Confirm that the intended application environment meets the recommended storage conditions, specifically dry nitrogen atmosphere, to maintain device integrity prior to assembly.
Selection Notes
Select this bare die for designs requiring high thermal stability up to 175°C and low saturation voltage. Ensure the module design and mounting technology account for the dynamic characteristics, as switching properties depend heavily on the assembly. Validate all operating parameters for the specific customer application requirements before integration.
Part Context
This component belongs to onsemi's fourth-generation field stop IGBT series. It is engineered to deliver optimum performance where minimizing both conduction and switching losses is critical. The product represents a specialized semiconductor solution tailored for power electronics demanding high efficiency and reliability.
Replacement Considerations
No direct public substitute part numbers are documented in the provided datasheet. Engineers must evaluate alternative bare die IGBTs based on matching voltage ratings, current capabilities, and package compatibility within their specific module architecture.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage is 1.6 V at a collector current of 40 A.
What is the recommended storage environment for this die?
The recommended storage environment is in the original container, in dry nitrogen, for less than 3 months at an ambient temperature of 23°C.
