PCP1203-TD-H

Single Bipolar Transistors Overview

PCP1203-TD-H is a single NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon epitaxial planar technology and is housed in a surface-mount SOT-89-3 package. The device supports a maximum continuous collector current of 700 mA and withstands a collector-emitter voltage of 200 V. Key electrical characteristics include a collector-base voltage of 220 V, an emitter-base voltage of 8 V, and a saturation voltage of 115 mV. It features a transition frequency of 120 MHz, power dissipation of 3.5 W, and operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for high-voltage switching applications
• Fast switching speed with a 120 MHz transition frequency
• Low collector-to-emitter saturation voltage for efficient power handling
• Robust thermal performance with 3.5 W power dissipation rating

Single Bipolar Transistors Applications

• High-voltage switching circuits
• General-purpose amplifier stages
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TD-H against official datasheets to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through manufacturer documentation. Check component lifecycle status as availability may be limited. Ensure the SOT-89-3 package matches design requirements. Validate operating temperature ranges for target environments.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and moderate current capacity are required in a compact surface-mount form factor. The 200 V rating distinguishes it from standard low-voltage transistors. Consider the 120 MHz bandwidth for medium-speed switching needs. Evaluate thermal management solutions given the 3.5 W dissipation limit in the small outline package.

Single Bipolar Transistors Part Context

The PCP1203 belongs to onsemi's lineup of single NPN bipolar junction transistors designed for general-purpose and switching applications. It complements other devices in the series offering various voltage and current ratings. The component is part of the broader discrete semiconductor portfolio used in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the NPN polarity, 200 V minimum VCEO, 700 mA minimum IC, and SOT-89-3 package. Verify equivalent transition frequency and saturation voltage characteristics. Cross-reference with other manufacturers' high-voltage BJT offerings in similar packages.