PD20010-E

PD20010-E

$10.14
  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-

SKU:a082ca1296de Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Technology:LDMOS
  • Frequency:2GHz
  • Gain:11dB
  • Voltage - Test:13.6 V
  • Current Rating (Amps):5A
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:10W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package:PowerSO-10RF (Formed Lead)
  • Configuration:-

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PD20010-E

Overview

The PD20010-E is a common source N-channel enhancement-mode lateral field-effect RF power transistor from STMicroelectronics. Designed for high gain and broadband commercial and industrial applications, it operates at 13.6 V in common source mode at frequencies up to 1 GHz. The device utilizes LDMOS technology mounted in the PowerSO-10RF plastic package, which is JEDEC approved and optimized for RF performance. Key electrical specifications include a POUT of 10 W with 11 dB gain at 2 GHz under 13.6 V conditions. It features excellent thermal stability, ESD protection, and compliance with European directives.

Feature Summary

  • Common source configuration utilizing LDMOS technology for high reliability
  • Plastic PowerSO-10RF package designed for ease of assembly and high RF performance
  • Integrated ESD protection mechanisms

Applications

  • Car mobile radio systems
  • Broadband commercial RF applications
  • Industrial RF applications

Procurement Notes

Verify the specific suffix (e.g., TR) against the datasheet to confirm tape-and-reel packaging requirements. Ensure the order matches the exact part number variant required for your PCB layout and thermal management design. Confirm RoHS compliance status if mandated by your regional regulations. Cross-reference the manufacturer's latest documentation for any potential obsolescence notices or lifecycle changes before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring 10 W output power at 2 GHz with 11 dB gain. The PowerSO-10RF package is suitable for applications needing robust SMD mounting with high thermal stability. Consider the 13.6 V operating voltage constraint during power supply design. Evaluate the linearity performance benefits for car mobile radio implementations compared to standard MOSFETs.

Part Context

This device belongs to the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs. It represents ST’s integration of advanced LDMOS technology into a true SMD plastic RF power package. The PowerSO-10RF is noted as the first ST JEDEC approved high-power SMD package specifically optimized for RF needs, distinguishing it from traditional ceramic or metal RF packages.

Replacement Considerations

PD20015-E and PD20015S-E are similar RF power transistors from the same LdmoST family. Verify pinout compatibility and specific power/gain requirements at target frequencies before substitution. Check if the alternative part meets the same JEDEC approval standards for the PowerSO-10RF package.

PD20010-EPD20010-E
$10.14
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