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Product Detailed Parameters
- Description：RF MOSFET LDMOS 13.6V PWRSO-10RF
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Technology：LDMOS
- Frequency：2GHz
- Gain：11dB
- Voltage - Test：13.6 V
- Current Rating (Amps)：5A
- Noise Figure：-
- Current - Test：150 mA
- Power - Output：10W
- Voltage - Rated：40 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
- Supplier Device Package：PowerSO-10RF (Straight Lead)
- Configuration：-
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Overview
The PD20010S-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. Designed for high gain and broadband applications, this component utilizes LDMOS technology. It operates within a rated voltage of 40 V and delivers an output power of 10 W. The device is housed in a PowerSO-10RF package with an exposed bottom pad and two straight leads, suitable for surface mount installation.
Feature Summary
- Common source N-Channel enhancement-mode lateral field-effect RF power transistor
- Designed for high gain and broadband commercial applications
- Utilizes LDMOS technology for robust RF performance
Applications
- Broadband commercial RF amplification
- High-gain RF signal processing circuits
- Commercial radio frequency transmitter stages
Procurement Notes
Verify the obsolete status of the PD20010S-E before procurement planning. Confirm availability through authorized distributors or secondary market suppliers, as standard production lines may not stock this item. Ensure the PowerSO-10RF package variant matches the specific lead configuration required for the target PCB footprint to avoid assembly issues.
Selection Notes
Select this component for applications requiring 10 W output power at 40 V ratings. Consider the PowerSO-10RF package for thermal management needs associated with RF power dissipation. Evaluate the broadband capability against specific frequency requirements, as the device is optimized for high-gain wideband operation rather than narrowband tuning.
Part Context
This part belongs to the PD20010 series of RF MOSFET transistors from STMicroelectronics. The series includes variants such as the PD20010-E and PD57030-E, which differ in power output and voltage ratings. The PD20010S-E specifically denotes the SMD package version with straight leads, distinguishing it from other package configurations within the same electrical family.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct replacements should be evaluated based on matching 10 W output, 40 V rating, and PowerSO-10RF package compatibility.
