SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PD20010STR-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed as a common source RF power transistor. It operates with a drain-source voltage of 40V and delivers 10W of output power at 2GHz. The device provides 11dB gain and supports a continuous drain current of 150mA. Packaged in PowerSO-10RF with straight leads, it is optimized for high-gain broadband applications.
Verify the specific ordering suffix to ensure the correct package variant and lead configuration match your PCB footprint requirements. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the exact part number against the latest datasheet revision to ensure parameter consistency and availability.
Select this component for applications requiring moderate RF power output with high gain characteristics. Ensure the operating frequency aligns with the 2GHz specification for optimal performance. Consider thermal management solutions suitable for the PowerSO-10RF package when designing for continuous 10W operation in commercial environments.
This device belongs to STMicroelectronics' LdmoST plastic family of N-channel lateral MOSFETs. These transistors are engineered specifically for radio frequency power applications, offering a balance of power handling and gain efficiency. The family targets commercial markets where reliable broadband performance is required.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for potential alternatives or direct replacements.