PD20010TR-E

PD20010TR-E

$15.58
  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-

SKU:cb5ff9f8825c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2GHz
  • Gain:11dB
  • Voltage - Test:13.6 V
  • Current Rating (Amps):5A
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:10W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package:PowerSO-10RF (Formed Lead)
  • Configuration:-

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PD20010TR-E

Overview

The PD20010TR-E is an N-channel enhancement-mode lateral field-effect RF power transistor from the LdmoST plastic family. Designed for high gain and broadband applications, it operates in common source mode at frequencies up to 1 GHz with a supply voltage of 13.6 V. The device delivers 10 W output power with 11 dB gain at 2 GHz. It utilizes the PowerSO-10RF package, which provides excellent thermal stability and ESD protection while meeting JEDEC standards for high-power surface-mount assembly.

Feature Summary

  • Common source configuration for high gain performance
  • PowerSO-10RF plastic package optimized for RF needs
  • Excellent thermal stability and reliability
  • Integrated ESD protection

Applications

  • Car mobile radio systems
  • Broadband commercial RF applications
  • Industrial RF applications

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or official manufacturer channels. Confirm lot codes and date codes against current production status. Ensure handling procedures comply with ESD safety standards due to the sensitive nature of RF MOSFET structures. Review latest datasheets for any updates regarding material compliance or packaging specifications before integration into final designs.

Selection Notes

Select this component for designs requiring high linearity and gain in the VHF/UHF bands. The PowerSO-10RF package facilitates automated assembly compared to traditional ceramic packages. Evaluate thermal management requirements carefully, as the plastic package relies on PCB heat dissipation. Ensure impedance matching networks are designed to support the 13.6 V operating point and 10 W output capability at target frequencies.

Part Context

This part belongs to the PD20010-E series of LDMOS transistors. It represents STMicroelectronics' adoption of LdmoST technology in a surface-mount plastic package. The series targets applications needing robust RF performance without the complexity of hermetic packaging. It complements other LDMOS devices in the portfolio by offering a balance of power density and ease of integration.

Replacement Considerations

Direct pin-compatible replacements within the same package may include other PD2001x variants from STMicroelectronics, such as PD20015-E, provided frequency and power requirements align. Verify that substitute parts maintain equivalent gain, linearity, and thermal characteristics for the specific application environment.

PD20010TR-EPD20010TR-E
$15.58
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