PD54003L-E

Overview

The PD54003L-E is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor manufactured by STMicroelectronics. It operates at a test voltage of 7.5 V and delivers 3 W output power with 20 dB gain at 500 MHz. The device supports frequencies up to 1 GHz, features a continuous drain current of 4 A, and has a drain-source breakdown voltage of 25 V. It utilizes the PowerFLAT™ (5x5) package for surface mount installation.

Feature Summary

• Common source configuration designed for high gain and broadband commercial applications
• Utilizes LDMOS technology for excellent linearity and reliability
• Leadless SMD plastic package optimized for thermal stability

Applications

• Portable two-way UHF radio communication
• Broadband commercial RF amplification
• Industrial RF power stages

Procurement Notes

Verify component authenticity through authorized channels as this part is obsolete. Check datasheet revisions for specific handling instructions regarding moisture sensitivity. Confirm pinout compatibility if integrating into existing designs that previously utilized this component type.

Selection Notes

Select based on required output power and frequency range within the 500 MHz to 1 GHz spectrum. Ensure the design accommodates the 7.5 V operating voltage and 25 V breakdown limit. Consider thermal management requirements associated with the PowerFLAT package for sustained operation.

Part Context

This component belongs to the PD54003 series of LDMOS transistors. It is specifically engineered for portable radio applications where superior linearity and compact surface-mount packaging are critical. The device represents ST's integration of advanced LDMOS processes into leadless plastic packages.

Replacement Considerations

PD54008L-E is a confirmed substitute offering higher output power capabilities while maintaining similar package and operational characteristics.