PD54008-E

Overview

The PD54008-E is an N-channel enhancement-mode lateral field-effect RF power transistor from the LdmoST plastic family. It operates at 7 V in common source mode with frequencies up to 1 GHz. Key electrical parameters include a continuous drain current of 5 A, a drain-source breakdown voltage of 25 V, and a gate-source voltage of +20 V. The device delivers 8 W output power with 11.5 dB gain at 500 MHz/7.5 V. Power dissipation is rated at 73 W. Operating temperature ranges from -65 C to +150 C. It utilizes the PowerSO-10RF-Straight-4 surface-mount package.

Feature Summary

• Common source configuration for high gain and broad band commercial applications
• Excellent thermal stability and reliability using ST’s latest LDMOS technology
• Superior linearity performance suitable for portable radio solutions
• JEDEC approved high power SMD plastic package optimized for RF needs

Applications

• Broadband commercial applications
• Industrial applications
• Portable radio systems

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or direct manufacturer channels. Confirm lot traceability and RoHS compliance status via official datasheets. Check for moisture sensitivity handling requirements due to the plastic package construction. Ensure storage conditions meet specified humidity limits to prevent degradation before assembly.

Selection Notes

Select this component for designs requiring high linearity and thermal stability in RF power stages. The PowerSO-10RF package facilitates ease of assembly while maintaining excellent RF performance. Consider the 7 V operating requirement and 1 GHz frequency limit when matching circuit specifications. Evaluate thermal management capabilities given the 73 W power dissipation rating.

Part Context

The PD54008-E belongs to the PD54008 series of RF power transistors. It represents STMicroelectronics' integration of LDMOS technology into a true SMD plastic package. This design targets applications needing robust performance in compact form factors. The series emphasizes reliability and ease of manufacturing integration for RF engineers.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative devices by comparing electrical parameters such as gain, output power, and package dimensions against specific design requirements.