SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PD54008 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor from the LdmoST family. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features excellent gain, linearity, and reliability using ST’s latest LDMOS technology mounted in the PowerSO-10RF plastic package. Key electrical specifications include a drain-source voltage (V(BR)DSS) of 25 V, a maximum operating junction temperature of 165 °C, and a typical output power (POUT) of 8 W with 11.5 dB gain at 500 MHz / 7.5 V.
Verify component authenticity through authorized channels as this part is marked obsolete. Confirm exact lead style (straight or formed) required for your assembly process. Review application note AN1294 for proper mounting recommendations to ensure optimal thermal performance and reliability during installation.
Select based on the specific lead configuration needed: standard straight leads for PD54008 or formed gull-wing leads for PD54008S. Ensure the design accommodates the 25 V drain-source voltage limit and utilizes the PowerSO-10RF package dimensions. Verify that the target frequency range aligns with the device's optimized performance up to 1 GHz.
The PD54008 belongs to the LdmoST family of N-channel enhancement-mode lateral MOSFETs. It represents an early adoption of ST's LDMOS technology in a JEDEC-approved high-power SMD plastic package designed specifically for RF needs. This series focuses on providing reliable RF power amplification in a compact surface-mount form factor.
PD54008S
The primary difference lies in the lead style. The PD54008 features straight leads, while the PD54008S has formed gull-wing leads. Both share identical electrical characteristics and are housed in the PowerSO-10RF package.
The maximum operating junction temperature (Tj) is 165 °C.
The device is designed to operate at frequencies of up to 1 GHz, with specific performance metrics like 8 W output power typically cited at 500 MHz.