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The PD54008L-E is an N-Channel, enhancement-mode lateral Field-Effect RF power transistor manufactured by STMicroelectronics. It utilizes LDMOS technology in a leadless PowerFLAT™ (5x5) plastic package. The device operates at a supply voltage of 7 V with a drain-source breakdown voltage of 25 V and a continuous drain current of 5 A. It delivers an output power of 8 W with a gain of 15 dB at 500 MHz, functioning up to 1 GHz. Operating temperatures range from -65°C to +150°C.
Verify the component status as discontinued or obsolete through official STMicroelectronics channels before design finalization. Confirm availability of qualified replacement parts such as the PD54008L-E if currently sourcing older stock. Ensure compliance with RoHS directives and verify specific tape & reel packaging quantities required for production integration.
Select this component for designs requiring 8 W output power at frequencies up to 1 GHz. The 25 V breakdown voltage supports standard 7 V supply rails. Consider the PowerFLAT™ package for surface mount assembly constraints. Evaluate thermal management requirements given the 150°C maximum junction temperature limit and leadless package characteristics.
This part belongs to the LdmoST plastic family of RF power transistors. It represents STMicroelectronics' implementation of STH1LV LDMOS technology. The series targets high-reliability commercial and industrial RF markets where linear performance and thermal robustness are critical specifications.
The PD54003L-E is documented as a similar alternative within the same manufacturer portfolio. Verify pinout compatibility and electrical parameter alignment before substitution.