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The PD54008TR-E is an N-channel enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. It utilizes LDMOS technology and operates in a common source configuration at frequencies up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 25 V, a continuous drain current (Id) of 5 A, and a gate-source voltage (Vgs) limit of +20 V. The device delivers an output power (POUT) of 8 W with a gain of 11.5 dB at 500 MHz and 7.5 V supply. Power dissipation (Pd) is rated at 73 W. It functions within a temperature range of -65°C to +150°C and is housed in a PowerSO-10RF-Formed-4 surface-mount package.
Verify the specific ordering suffix and manufacturer part number against official STMicroelectronics documentation before procurement. Confirm that the component meets RoHS compliance requirements as specified in the product data sheet. Ensure handling procedures account for moisture sensitivity classification during storage and assembly processes.
Select this component for designs requiring an 8 W output power capability at 500 MHz with 11.5 dB gain. Ensure the circuit supports a 7 V to 7.5 V common source operation. Verify that the PCB layout accommodates the PowerSO-10RF-Formed-4 package dimensions and thermal requirements for 73 W power dissipation.
This device belongs to the PD54008-E series of RF power transistors. It represents STMicroelectronics' LDMOST plastic family, designed to combine high reliability with ease of assembly in a surface-mount format. The series targets applications needing broad band performance and high gain in compact packages.
Consult official STMicroelectronics substitution guides for verified equivalents. No public substitute part numbers are confirmed in the provided documentation.