PD54008TR-E

PD54008TR-E

$8.22
  • Description:RF MOSFET LDMOS 7.5V PWRSO-10RF
  • Series:-

SKU:634a575bc019 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 7.5V PWRSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:500MHz
  • Gain:11.5dB
  • Voltage - Test:7.5 V
  • Current Rating (Amps):5A
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:8W
  • Voltage - Rated:25 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package:PowerSO-10RF (Formed Lead)
  • Configuration:-

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PD54008TR-E

Overview

The PD54008TR-E is an N-channel enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. It utilizes LDMOS technology and operates in a common source configuration at frequencies up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 25 V, a continuous drain current (Id) of 5 A, and a gate-source voltage (Vgs) limit of +20 V. The device delivers an output power (POUT) of 8 W with a gain of 11.5 dB at 500 MHz and 7.5 V supply. Power dissipation (Pd) is rated at 73 W. It functions within a temperature range of -65°C to +150°C and is housed in a PowerSO-10RF-Formed-4 surface-mount package.

Feature Summary

  • Common source N-channel enhancement-mode lateral MOSFET design for high gain applications
  • LDMOS technology providing excellent thermal stability and linearity
  • JEDEC approved PowerSO-10RF plastic SMD package optimized for RF performance

Applications

  • Broadband commercial and industrial RF amplifiers
  • Portable radio systems requiring superior linearity
  • High gain RF power stages operating up to 1 GHz

Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official STMicroelectronics documentation before procurement. Confirm that the component meets RoHS compliance requirements as specified in the product data sheet. Ensure handling procedures account for moisture sensitivity classification during storage and assembly processes.

Selection Notes

Select this component for designs requiring an 8 W output power capability at 500 MHz with 11.5 dB gain. Ensure the circuit supports a 7 V to 7.5 V common source operation. Verify that the PCB layout accommodates the PowerSO-10RF-Formed-4 package dimensions and thermal requirements for 73 W power dissipation.

Part Context

This device belongs to the PD54008-E series of RF power transistors. It represents STMicroelectronics' LDMOST plastic family, designed to combine high reliability with ease of assembly in a surface-mount format. The series targets applications needing broad band performance and high gain in compact packages.

Replacement Considerations

Consult official STMicroelectronics substitution guides for verified equivalents. No public substitute part numbers are confirmed in the provided documentation.

PD54008TR-EPD54008TR-E
$8.22
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