PD55003-E

Overview

The PD55003-E is an active RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs. Designed for high gain and broad band commercial and industrial applications, it operates at 12 V in common source mode at frequencies up to 1 GHz. Key electrical parameters include a continuous drain current of 2.5 A, a drain-source breakdown voltage of 40 V, and a power dissipation of 31.7 W. It delivers 3 W output power with 17 dB gain at 500 MHz under 12.5 V conditions. The device functions within a temperature range of -65 °C to +150 °C and utilizes the PowerSO-10RF package.

Feature Summary

• Common source configuration optimized for high gain and linearity
• Excellent thermal stability inherent to LDMOS technology
• JEDEC-approved high power SMD plastic package design

Applications

• Car mobile radios
• Broadband commercial amplifiers
• Industrial RF applications

Procurement Notes

Verify the specific ordering suffix against official STMicroelectronics documentation to confirm packaging type and compliance status. The base part number corresponds to the standard component, while suffixes may indicate variations such as tape and reel quantities or specific environmental certifications. Always cross-reference the manufacturer's latest datasheet to ensure the procured item matches the required technical specifications and regulatory standards for the intended deployment.

Selection Notes

Select this component when a common source N-channel lateral MOSFET is required for broadband RF power amplification up to 1 GHz. The PowerSO-10RF package facilitates surface mount assembly while providing robust thermal performance. Ensure the application demands approximately 3 W output power at 500 MHz with 17 dB gain. Verify that the system can support the specified 12 V operating voltage and that the thermal management strategy aligns with the 31.7 W power dissipation capability.

Part Context

The PD55003-E belongs to the LdmoST plastic family, representing STMicroelectronics' lateral DMOS technology adapted for surface mount packages. This series addresses the need for reliable RF power transistors that combine high performance with ease of automated assembly. The PowerSO-10RF package is specifically engineered for RF requirements, offering improved reliability compared to traditional ceramic packages while maintaining competitive electrical characteristics for commercial and industrial markets.

Replacement Considerations

The PD55003L-E serves as a leadless alternative within the same family, utilizing the PowerFLAT 5x5 HV package. Both devices share identical electrical performance metrics, including 3 W output power and 17 dB gain at 500 MHz. Selection between these variants depends primarily on PCB layout constraints and thermal interface requirements rather than functional differences.