SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PD55003L-E is an N-channel enhancement-mode lateral field-effect RF power transistor from the LdmoST plastic family. It operates at 12 V in common source mode with frequencies up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage of 40 V, continuous drain current of 2.5 A, and output power of 3 W. The device provides 17 dB gain at 500 MHz under 12.5 V test conditions. It functions within a temperature range of -65 °C to +150 °C and utilizes a PowerFLAT 5x5 HV leadless SMD package.
Verify the specific suffix 'E' indicates compliance with RoHS directives and Ecopack2 standards. Confirm the package variant matches the PowerFLAT 5x5 HV specification rather than other LdmoST packages like PowerSO-10. Ensure procurement channels supply the component in tape and reel formats as documented for this active part number.
Select this component when a 40 V N-channel RF MOSFET with 3 W output capability is required. The 17 dB gain at 500 MHz suits broadband designs. Verify that the 12 V operating voltage aligns with system power rails. The PowerFLAT package requires appropriate thermal management solutions due to its leadless surface mount design.
This part belongs to STMicroelectronics' LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs. It represents an evolution in RF power transistors utilizing advanced LD-MOS technology. The series targets high-performance requirements in commercial and industrial sectors where reliability and linearity are critical.
The PD55003TR-E shares similar electrical characteristics but uses a PowerSO-10 package. Verify pinout compatibility and thermal dissipation differences before substitution. Other members of the PD55003 series may offer different voltage or power ratings.