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Product Detailed Parameters
- Description：RF MOSFET LDMOS 12.5V PWRSO-10RF
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Technology：LDMOS
- Frequency：500MHz
- Gain：17dB
- Voltage - Test：12.5 V
- Current Rating (Amps)：2.5A
- Noise Figure：-
- Current - Test：50 mA
- Power - Output：3W
- Voltage - Rated：40 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：PowerSO-10 Exposed Bottom Pad
- Supplier Device Package：PowerSO-10RF (Straight Lead)
- Configuration：-
Download product information
Overview
The PD55003S-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed as a common source RF power transistor. It operates at 12 V with frequencies up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, continuous drain current (Id) of 2.5 A, and gate-source voltage (Vgs) of +20 V. The device delivers 3 W output power with 17 dB gain at 500 MHz / 12.5 V. Power dissipation is 31.7 W. Operating temperature ranges from -65 C to +150 C. It utilizes the PowerSO-10RF-Straight-4 SMD package.
Feature Summary
- Excellent thermal stability for reliable operation
- Common source configuration optimized for high gain
- Superior linearity performance suitable for mobile radios
Applications
- Car mobile radios
- Broadband commercial applications
- Industrial RF applications
Procurement Notes
Verify the specific suffix 'S' against the manufacturer's official datasheet to confirm package orientation and pinout compatibility. Ensure the component meets RoHS compliance requirements for your target market. Confirm moisture sensitivity levels and storage conditions prior to assembly to prevent damage during soldering processes.
Selection Notes
Select this component for designs requiring high gain and broad bandwidth in the VHF/UHF range. The PowerSO-10RF package offers JEDEC-approved reliability for surface mount assembly. Consider the 40 V breakdown voltage and 3 W output capability when matching impedance networks and load lines for optimal efficiency.
Part Context
This part belongs to the PD55003-E series of LdmoST plastic family transistors. It shares core electrical characteristics with variants like PD55003TR-E and PD55003L-E, differing primarily in packaging format and reel specifications. The series represents STMicroelectronics' lateral DMOS technology for RF power amplification.
Replacement Considerations
PD55003TR-E: Same electrical performance but supplied in tape and reel packaging instead of tube. Verify package lead form differences between straight and formed leads.
