PD55003S

Overview

The PD55003S is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST plastic family. It operates at 12 V in common source mode up to 1 GHz. Key electrical parameters include a drain-source voltage of 40 V, gate-source voltage of ±20 V, and continuous drain current of 2.5 A. At 500 MHz with 12.5 V supply and 50 mA bias, it delivers 3 W output power with 17 dB gain and 52% drain efficiency. The device features a junction-to-case thermal resistance of 3.0 °C/W and is housed in a PowerSO-10RF package.

Feature Summary

• Common source configuration designed for high gain and broad band commercial applications
• Utilizes LDMOS technology for excellent linearity and reliability
• PowerSO-10RF plastic package optimized for RF performance and ease of assembly

Applications

• Car mobile radio systems
• Broadband commercial RF amplifiers
• Industrial RF applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead type variations. Ensure compatibility with JEDEC approved mounting standards for the PowerSO-10RF package. Confirm RoHS compliance status through the latest product data sheet before integration into designs requiring environmental directives adherence.

Selection Notes

Select this component for designs requiring high gain and broad bandwidth operation up to 1 GHz. Consider the 3.0 °C/W thermal resistance for heat dissipation planning. Verify impedance matching requirements using the provided S-parameter data for optimal power transfer at target frequencies such as 500 MHz or 860 MHz.

Part Context

This part belongs to the PD55003-E series of RF power transistors. The 'S' suffix denotes the straight lead variant of the PowerSO-10RF package, distinct from the formed lead version. It shares core LDMOS technology specifications with other members of the LdmoST plastic family.

Replacement Considerations

PD55003 (formed lead variant)

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 165 °C.

What is the typical power gain at 500 MHz?

The typical power gain is 17 dB at 500 MHz with a 12.5 V supply and 50 mA bias current.

Is the device suitable for broadband applications?

Yes, it is designed for high gain, broad band commercial and industrial applications up to 1 GHz.