PD55003STR-E

PD55003STR-E

$7.03
  • Description:RF MOSFET LDMOS 12.5V PWRSO-10RF
  • Series:-

SKU:3af3f0f92875 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 12.5V PWRSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:500MHz
  • Gain:17dB
  • Voltage - Test:12.5 V
  • Current Rating (Amps):2.5A
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:3W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package:PowerSO-10RF (Straight Lead)
  • Configuration:-

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PD55003STR-E

Overview

The PD55003STR-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST plastic family. It operates at 12 V in common source mode with frequencies up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, continuous drain current (Id) of 2.5 A, and gate-source voltage (Vgs) of +20 V. The device delivers 3 W output power with 17 dB gain at 500 MHz. Power dissipation is rated at 31.7 W. Operating temperature ranges from -65 C to +150 C. It is housed in a PowerSO-10RF-Formed-4 package.

Feature Summary

  • Common source configuration designed for high gain and broadband commercial applications
  • Utilizes ST’s LDMOS technology for excellent linearity and reliability
  • Mounted in JEDEC-approved PowerSO-10RF SMD plastic package optimized for RF performance

Applications

  • Car mobile radios
  • Broadband commercial applications
  • Industrial applications

Procurement Notes

Verify the specific ordering suffix STR-E against official STMicroelectronics documentation to confirm the tape and reel packaging format. Ensure compatibility with moisture sensitivity levels and handling requirements specified in the datasheet before procurement. Cross-reference the manufacturer part number directly with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component for designs requiring 3 W output power at 500 MHz with 17 dB gain. It is suitable for 12 V common source operation up to 1 GHz. Consider the PowerSO-10RF package for surface mount assembly. Verify thermal management capabilities align with the 31.7 W power dissipation rating and operating temperature range.

Part Context

This part belongs to the PD55003-E series of RF power transistors. It shares core specifications with the PD55003-E but differs in packaging. The standard PD55003-E uses a tube package, while the PD55003STR-E utilizes tape and reel packaging for automated assembly. Both are N-channel enhancement-mode lateral MOSFETs.

Replacement Considerations

PD55003-E is the equivalent part number with identical electrical characteristics but different packaging (Tube vs. Tape and Reel).

FAQ

What is the maximum operating frequency?

The device operates at frequencies up to 1 GHz.

What is the output power at 500 MHz?

The output power is 3 W with 17 dB gain at 500 MHz when operated at 12.5 V.

What type of package does it use?

It uses the PowerSO-10RF-Formed-4 surface mount package.

PD55003STR-EPD55003STR-E
$7.03
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