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The PD55003STR-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST plastic family. It operates at 12 V in common source mode with frequencies up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, continuous drain current (Id) of 2.5 A, and gate-source voltage (Vgs) of +20 V. The device delivers 3 W output power with 17 dB gain at 500 MHz. Power dissipation is rated at 31.7 W. Operating temperature ranges from -65 C to +150 C. It is housed in a PowerSO-10RF-Formed-4 package.
Verify the specific ordering suffix STR-E against official STMicroelectronics documentation to confirm the tape and reel packaging format. Ensure compatibility with moisture sensitivity levels and handling requirements specified in the datasheet before procurement. Cross-reference the manufacturer part number directly with authorized distributors to avoid counterfeit components.
Select this component for designs requiring 3 W output power at 500 MHz with 17 dB gain. It is suitable for 12 V common source operation up to 1 GHz. Consider the PowerSO-10RF package for surface mount assembly. Verify thermal management capabilities align with the 31.7 W power dissipation rating and operating temperature range.
This part belongs to the PD55003-E series of RF power transistors. It shares core specifications with the PD55003-E but differs in packaging. The standard PD55003-E uses a tube package, while the PD55003STR-E utilizes tape and reel packaging for automated assembly. Both are N-channel enhancement-mode lateral MOSFETs.
PD55003-E is the equivalent part number with identical electrical characteristics but different packaging (Tube vs. Tape and Reel).
The device operates at frequencies up to 1 GHz.
The output power is 3 W with 17 dB gain at 500 MHz when operated at 12.5 V.
It uses the PowerSO-10RF-Formed-4 surface mount package.