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The PD55008 is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST Plastic Family. It operates in common source mode at frequencies up to 1 GHz with a drain-source voltage of 40 V and gate-source voltage of ±20 V. The device delivers 8 W output power with 17 dB gain at 500 MHz under 12.5 V supply conditions. It features a maximum junction temperature of 165 °C, a thermal resistance of 1.8 °C/W, and continuous drain current of 4 A. The component utilizes the PowerSO-10RF package.
Verify the specific lead configuration required for the application, as the standard PD55008 designation corresponds to formed (gull-wing) leads while straight leads are designated as PD55008S. Confirm JEDEC approval status and mounting recommendations via application note AN1294 before finalizing procurement specifications.
Select this component for designs requiring high gain and broad bandwidth in the VHF/UHF range. Ensure the PCB layout accommodates the PowerSO-10RF package dimensions and provides adequate thermal management to maintain case temperatures within limits. Verify impedance matching networks against the provided S-parameter data for optimal performance.
This part belongs to the LdmoST Plastic Family of N-channel enhancement-mode lateral MOSFETs. It represents one of the first true SMD plastic RF power packages approved by JEDEC for high-power applications. The family includes variants such as PD55008S for different lead configurations.
PD55008S serves as the direct alternative with straight leads instead of formed gull-wing leads. Both share identical electrical characteristics and package body dimensions.