PD55008STR-E

Overview

The PD55008STR-E is an N-channel enhancement-mode lateral MOSFET RF power transistor manufactured by STMicroelectronics. It utilizes LDMOS technology and operates at a test voltage of 12.5 V with a drain-source breakdown voltage of 40 V. The device delivers an output power of 8 W with a gain of 17 dB at a frequency of 500 MHz. It features a continuous drain current rating of 4 A and is housed in a PowerSO-10RF package with formed leads.

Feature Summary

• LDMOS technology providing high gain and linearity for broadband applications
• PowerSO-10RF plastic package optimized for RF performance and thermal stability
• JEDEC approved high-power surface-mount design

Applications

• Car mobile radio systems
• Broadband commercial applications
• Industrial applications

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with JEDEC standards for the PowerSO-10RF form factor. Confirm RoHS3 compliance status through the manufacturer's latest datasheet before procurement.

Selection Notes

Select this component for designs requiring 8 W output power at 500 MHz with 17 dB gain. The 40 V breakdown voltage supports standard 12.5 V operation. Consider the PowerSO-10RF package for SMT assembly requirements and verify thermal management needs based on the specified power dissipation characteristics.

Part Context

This part belongs to the PD55008 family of RF power transistors. It shares core electrical specifications with variants like the PD55008S-E but differs in packaging and reel configuration. The STR suffix typically indicates a specific tape-and-reel packaging format within the broader product line.

Replacement Considerations

PD55008S-E offers identical electrical performance in a similar PowerSO-10RF package. Verify pinout and thermal pad configurations when substituting to ensure mechanical compatibility.