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The PD55008TR-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST plastic family. It operates at a test voltage of 12.5 V with a continuous drain current of 4 A and a gate-source voltage of +20 V. The device delivers 8 W output power with 17 dB gain at 500 MHz, functioning up to 1 GHz. It features a PowerSO-10RF package with formed leads and a dissipation rating of 52.8 W.
Verify the specific ordering suffix TR-E against the manufacturer's official datasheet to confirm the tape and reel packaging format. Ensure the component matches the PowerSO-10RF package type and LDMOS technology specifications required for your design. Cross-reference the part number with the latest STMicroelectronics documentation to avoid discrepancies in lead forming or RoHS compliance status.
Select this component for designs requiring high gain and broad bandwidth in commercial or industrial settings. The PowerSO-10RF package facilitates surface mount assembly while providing necessary RF performance. Consider the 1 GHz operating frequency limit and 8 W output capability when designing matching networks. Verify thermal management requirements due to the 52.8 W power dissipation rating.
This part belongs to the PD55008-E series of lateral MOSFETs manufactured by STMicroelectronics. It utilizes LDMOS technology mounted in a specialized RF plastic package designed for reliability and ease of assembly. The series is engineered for common source operation at 12 V, targeting applications that demand excellent gain and linearity characteristics.
PD55008S-E shares identical electrical parameters but uses a tube package instead of tape and reel.