PD55008TR

Overview

The PD55008 is an N-channel enhancement-mode lateral MOSFET RF power transistor from STMicroelectronics, designed for high gain and broad band commercial applications. It operates at 12 V in common source mode up to 1 GHz. Key electrical specifications include a drain-source voltage of 40 V, maximum drain current of 4 A, and junction temperature of 165 °C. At 500 MHz with 12.5 V supply and 150 mA bias, it delivers 8 W output power with 17 dB gain and 55% drain efficiency. The device utilizes LDMOS technology in the PowerSO-10RF plastic package.

Feature Summary

• Common source configuration utilizing N-channel enhancement-mode lateral MOSFET technology
• Excellent thermal stability and superior linearity performance suitable for sensitive signal applications
• Mounted in the first true SMD plastic RF power package, PowerSO-10RF, optimized for RF needs

Applications

• Car mobile radio systems
• Broad band commercial RF amplifiers
• Industrial RF applications

Procurement Notes

Verify the specific ordering suffix when sourcing components. The PD55008 variant features formed gull-wing leads, while the PD55008S variant utilizes straight leads. Both share identical internal electrical characteristics but differ in physical lead configuration for mounting. Confirm the required lead style matches the target PCB footprint design before procurement.

Selection Notes

Select the PD55008 or PD55008S based on the required surface mount lead type. Ensure the application circuit supports the 12.5 V operating voltage and 150 mA quiescent current for optimal performance metrics. Verify that the thermal management solution can handle the specified junction-to-case thermal resistance of 1.8 °C/W to maintain reliability within the 165 °C maximum junction temperature limit.

Part Context

This component belongs to the LdmoST Plastic Family of RF power transistors. It represents ST's integration of latest LDMOS technology into a JEDEC approved high power SMD package. The family focuses on providing high reliability and ease of assembly for RF designers requiring plastic packaging solutions instead of traditional ceramic or metal cases.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult STMicroelectronics directly for cross-reference recommendations or verify compatibility with alternative LDMOS devices offering similar PowerSO-10RF package dimensions and electrical ratings.