PD55015-E

Overview

The PD55015-E is a single N-channel enhancement-mode lateral MOSFET from the LdmoST series, designed for RF power applications. It features a maximum drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 5 A. The device delivers an output power (Pout) of 15 W with a typical power gain of 14 dB at 500 MHz and 12.5 V supply. It operates at frequencies up to 1 GHz and has a maximum power dissipation (Pd) of 73 W. The component is housed in a PowerSO-10RF package with formed leads, measuring 9.6 mm in length and 3.6 mm in height. It supports a gate-source voltage (Vgs) of +20 V and functions within a temperature range of -65°C to +150°C.

Feature Summary

• Common source configuration optimized for high gain and broad band commercial and industrial applications
• Excellent thermal stability and linearity performance suitable for demanding RF environments
• JEDEC-approved plastic SMD package designed for high reliability and ease of assembly

Applications

• Car mobile radios
• Broadband commercial RF amplifiers
• Industrial RF equipment

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number PD55015-E typically corresponds to tube packaging, while variants like PD55015TR-E indicate reel or cut tape options. Confirm the exact package type and moisture sensitivity level required for your assembly process before placing orders. Ensure compatibility with JEDEC standards if specified in your design requirements.

Selection Notes

Select this component for designs requiring a single N-channel lateral MOSFET with 15 W output power at 500 MHz. The 40 V breakdown voltage and 5 A current rating support common 12 V to 12.5 V supply rails. Consider the PowerSO-10RF package dimensions and thermal characteristics for PCB layout. Verify that the application frequency aligns with the device's 1 GHz operational limit and that the required gain meets the 14 dB specification.

Part Context

The PD55015-E belongs to STMicroelectronics' LdmoST family of plastic lateral DMOS transistors. This series utilizes advanced LDMOS technology to provide high power density in surface-mount packages. The PowerSO-10RF is a specialized RF-formed lead package designed to offer superior RF performance compared to standard plastic packages, bridging the gap between traditional TO-220 devices and complex ceramic substrates.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult STMicroelectronics for direct replacements or evaluate other members of the LdmoST family based on specific electrical parameter matching.