PD55015S-E

Overview

The PD55015S-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed as a common source RF power transistor. It operates at frequencies up to 1 GHz with a maximum drain-source voltage of 40 V and continuous drain current of 5 A. The device delivers 15 W output power with 14 dB gain at 500 MHz under 12.5 V bias. It features a PowerSO-10RF-Straight-4 surface-mount package, rated for operation between -65°C and +150°C, with a maximum power dissipation of 73 W.

Feature Summary

• High linearity performance suitable for demanding RF applications
• Excellent thermal stability inherent to LDMOS technology
• JEDEC-approved high-power SMD plastic packaging

Applications

• Car mobile radios
• Broadband commercial RF amplifiers
• Industrial RF equipment

Procurement Notes

Verify the specific suffix 'S' against the manufacturer's official datasheet to confirm pinout orientation and lead form differences compared to standard versions. Ensure compatibility with JEDEC standards required by the design. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly.

Selection Notes

Select this component when 15 W output power at 500 MHz is required in a surface-mount format. Compare against PD55003-E for lower power needs or PD55025S-E for higher output requirements within the same package family. Verify that the 40 V breakdown voltage meets the circuit's peak voltage constraints.

Part Context

This part belongs to the LdmoST series of N-channel enhancement-mode lateral MOSFETs manufactured by STMicroelectronics. It utilizes proprietary LDMOS technology mounted in the PowerSO-10RF package, which is recognized as the first true SMD plastic RF power package approved by JEDEC for high reliability.

Replacement Considerations

PD55015-E serves as a functional equivalent within the same series. Verify if the 'S' suffix indicates a specific mechanical variation such as straight leads versus formed leads before substitution.