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The PD55015TR-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST family, designed for high-gain, broadband commercial and industrial RF applications. It operates in common source mode at frequencies up to 1 GHz with a drain-source voltage of 40 V and continuous drain current of 5 A. The device delivers 15 W output power with 14 dB gain at 500 MHz under 12.5 V bias. Packaged in a JEDEC-approved PowerSO-10RF surface-mount format, it features excellent thermal stability and linearity, making it suitable for demanding RF environments.
Verify the specific suffix against official STMicroelectronics documentation to confirm packaging variations. The TR suffix typically indicates tape and reel packaging, distinct from tube configurations. Confirm moisture sensitivity levels and reflow soldering profiles prior to procurement to ensure compliance with handling standards.
Select this component for designs requiring high linearity and thermal stability in SMD form factors. Ensure the operating frequency remains within the 1 GHz limit and that the 12.5 V bias condition aligns with system power constraints. Verify that the 15 W output capability meets the specific application's power requirements without exceeding thermal limits.
This part belongs to the PD55015-E series, representing STMicroelectronics' LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs. It utilizes advanced LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF, which was specifically optimized for RF performance and JEDEC approval.
PD55015-E (Tube version)
The device is designed to operate at frequencies of up to 1 GHz.
The typical power gain is 14 dB when operating at 500 MHz with a 12.5 V supply.
Yes, the PowerSO-10RF package is the first JEDEC-approved high-power SMD package from STMicroelectronics.