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The PD55025 is a common source N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST Plastic Family. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device delivers an output power of 25 W with 14.5 dB gain at 500 MHz and 12.5 V supply voltage. Key electrical specifications include a drain-source breakdown voltage of 40 V, a continuous drain current of 7 A, and a maximum junction temperature of 165 °C. It utilizes the PowerSO-10RF package for surface mount applications.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the specific ordering suffix matches the required lead style (straight or formed) as indicated in the datasheet. Ensure compliance with RoHS directives and check for any product change notifications regarding metallization updates before procurement.
Select based on required operating frequency within the 1 GHz limit and necessary output power levels. Consider thermal management requirements given the 1.2 °C/W junction-to-case thermal resistance. Verify compatibility with the PowerSO-10RF package dimensions and mounting recommendations provided in application note AN1294 for optimal RF performance.
The PD55025 belongs to the LdmoST Plastic Family of N-channel enhancement-mode lateral MOSFETs. It represents STMicroelectronics' integration of advanced LDMOS technology into a JEDEC-approved high-power SMD plastic package. This family targets applications requiring robust RF performance in compact surface-mount form factors.
PD55025S
The PD55025 is designed to operate at frequencies up to 1 GHz.
It uses the PowerSO-10RF package, which is available in straight lead and formed lead configurations.
The typical output power is 25 W with 14.5 dB gain when operating at 500 MHz and a 12.5 V supply voltage.