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The PD55025TR-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed for high-gain, broadband commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. Key electrical parameters include a continuous drain current of 7 A, a drain-source breakdown voltage of 12.5 V, and a maximum operating temperature of +165 C. The device delivers 25 W output power with 14.5 dB gain at 500 MHz and 12.5 V. It utilizes the PowerSO-10RF-2 surface-mount package.
Verify the specific ordering suffix against official STMicroelectronics documentation to confirm packaging details. The TR-E suffix indicates tape and reel packaging. Confirm RoHS compliance status via the manufacturer's datasheet or ECAD model files before procurement. Ensure the component meets humidity sensitivity requirements for your assembly process.
Select this component when designing circuits requiring 25 W output power at 500 MHz with 14.5 dB gain. It is appropriate for 12 V common source operation up to 1 GHz. Consider the PowerSO-10RF-2 package for surface mount assembly. Verify that the 12.5 V breakdown voltage and 7 A current rating align with your system's electrical constraints.
This part belongs to the PD55025-E series within STMicroelectronics' LDMOS technology portfolio. It shares characteristics with other devices in the LdmoST plastic family, such as the PD55015TR-E, which offers lower output power. The series is characterized by its use of advanced lateral MOSFET technology optimized for RF power amplification.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult STMicroelectronics application notes or distributor databases for potential cross-references. Any replacement must match the PowerSO-10RF-2 package and similar electrical specifications.