PD55035-E

Overview

The PD55035-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed for high-gain broadband commercial and industrial RF applications. It operates at a drain-source voltage of 40 V with a continuous drain current of 7 A. The device delivers 35 W output power with 16.9 dB gain at 500 MHz under 12.5 V bias. It functions up to 1 GHz, dissipates 95 W, and withstands temperatures from -65°C to +150°C.

Feature Summary

• Common source configuration utilizing ST's LDMOS technology for excellent linearity and reliability
• JEDEC approved PowerSO-10RF plastic package optimized for RF performance and ease of assembly
• Superior thermal stability suitable for demanding RF environments

Applications

• Car mobile radio systems
• Broadband commercial RF amplifiers
• Industrial RF equipment

Procurement Notes

Verify the specific suffix against official documentation, as variants like PD55035STR-E indicate tape-and-reel packaging while others may use tubes. Confirm RoHS compliance status and moisture sensitivity levels directly from the manufacturer datasheet before integration into production lines.

Selection Notes

Select this component for designs requiring high power density in a surface-mount form factor. Ensure the PCB layout supports the PowerSO-10RF thermal pad requirements. Verify that the operating frequency range aligns with the specified 1 GHz limit and that the gate drive voltage remains within the +20 V maximum rating.

Part Context

This transistor belongs to the PD55035-E series within STMicroelectronics' LdmoST plastic family. It shares architectural similarities with related models such as PD55003-E and PD85035-E, differing primarily in output power capabilities and specific biasing requirements for target frequency bands.

Replacement Considerations

PD55035STR-E is a verified variant within the same product family offering identical electrical characteristics but packaged in tape-and-reel format for automated assembly processes.