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The PD55035S-E is an N-channel enhancement-mode lateral field-effect RF power transistor from the LdmoST plastic family. It operates at 12.5 V in common source mode with frequencies up to 1 GHz. Key electrical parameters include a continuous drain current of 5 A, a drain-source breakdown voltage of 40 V, and a gate-source voltage of +20 V. The device delivers 35 W output power with 16.9 dB gain at 500 MHz. It features a maximum power dissipation of 73 W and operates within a temperature range of -65°C to +150°C. The component is housed in a PowerSO-10RF-Straight-4 SMD package.
Verify the specific suffix 'S' against official STMicroelectronics documentation to confirm tape-and-reel packaging versus tube variants. Ensure compatibility with application note AN1294 for mounting recommendations. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before integration into production schedules.
Select this component for designs requiring 35 W output power at 12.5 V bias. The PowerSO-10RF package facilitates surface-mount assembly while maintaining RF performance. Evaluate thermal management requirements given the 73 W power dissipation rating. Ensure the operating frequency remains within the 1 GHz limit for optimal gain characteristics.
This part belongs to the PD55035-E series of LdmoST plastic family transistors. It shares architectural similarities with other members like PD55003-E but offers higher power output. The series targets broadband RF applications where linearity and thermal stability are critical. The PowerSO-10RF package represents a standardized high-power SMD solution from STMicroelectronics.
PD55035-E is the base model variant. Verify if the 'S' suffix denotes a specific packaging option rather than a functional change. Cross-reference pinouts and thermal characteristics with similar 35 W LDMOS devices if alternative sourcing is required.