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The PD55035STR-E is an N-channel enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. It operates at a drain-source voltage of 40 V and delivers 35 W output power with 16.9 dB gain at 500 MHz under 12.5 V bias. The device supports continuous drain currents up to 7 A and functions within a frequency range of up to 1 GHz. It features a PowerSO-10RF-Straight-4 package with a solderable bottom pad for thermal management, enabling operation between -65°C and +150°C with 95 W power dissipation capability.
Verify the specific ordering suffix against the manufacturer's current datasheet to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and environmental directives as these attributes may vary across production batches or updated revisions. Ensure the component matches the exact JEDEC-approved PowerSO-10RF variant required for your thermal design.
Select this component when designing circuits requiring 35 W output power at frequencies up to 1 GHz. The PowerSO-10RF package necessitates specific mounting recommendations found in application note AN1294 to ensure optimal thermal performance. Verify that the 40 V breakdown voltage aligns with the system's maximum operating conditions.
This part belongs to the PD55035-E series of RF power transistors from STMicroelectronics. It shares the same core LDMOS technology and PowerSO-10RF packaging as other variants in the family but is distinguished by its specific 35 W power rating and 16.9 dB gain characteristics at 500 MHz.
PD55035STR1-E is a confirmed substitute within the same series offering identical 35 W performance and PowerSO-10RF packaging.