PD57006-E

Overview

The PD57006-E is an N-Channel enhancement-mode lateral MOSFET RF power transistor from the LDMOST plastic family. It operates at 28 V in common source mode up to 1 GHz, delivering 6 W output power with 15 dB gain at 945 MHz. The device features a drain-source breakdown voltage of 65 V and a maximum junction temperature of 165 °C. Packaged in PowerSO-10RF (formed lead), it offers excellent thermal stability and linearity for commercial and industrial applications.

Feature Summary

• High gain and broad band performance suitable for commercial and industrial applications
• Excellent thermal stability and superior linearity characteristics
• JEDEC approved high power surface-mount package optimized for RF needs

Applications

• Car mobile radio systems
• Broadband commercial RF amplifiers
• Industrial RF signal processing

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead configuration and packing method. The base model PD57006-E utilizes formed leads in tube packaging. Confirm availability status as distribution channels may vary by region.

Selection Notes

Select this component for designs requiring high gain and reliability in the sub-GHz range. Ensure the PCB layout accommodates the PowerSO-10RF package dimensions and provides adequate thermal dissipation paths to maintain junction temperatures within the specified limits.

Part Context

This part belongs to the PD57006-E series, which includes variants like PD57006S-E with straight leads. All members share identical electrical specifications but differ in mechanical form factor and tape/reel options.

Replacement Considerations

PD57006S-E: Identical electrical performance with straight leads instead of formed leads.