PD57006S

Overview

The PD57006S is an N-channel enhancement-mode lateral MOSFET RF power transistor from STMicroelectronics, designed for high gain and broad band commercial applications. It operates at 28 V in common source mode up to 1 GHz. Key electrical specifications include a drain-source breakdown voltage of 65 V, a gate-source voltage limit of ±20 V, and a continuous drain current of 1 A. At 945 MHz with a 28 V supply and 70 mA bias current, it delivers 6 W output power with 15 dB gain and 50% drain efficiency. The device utilizes the PowerSO-10RF straight lead plastic package, featuring a junction-to-case thermal resistance of 5 °C/W and a maximum operating junction temperature of 165 °C.

Feature Summary

• Common source configuration utilizing LdmoST Plastic Family technology for excellent thermal stability.
• Designed for high gain and broad band commercial and industrial applications.
• Superior linearity performance suitable for car mobile radio solutions.

Applications

• Car mobile radio systems
• Broad band commercial RF amplifiers
• Industrial RF applications

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm datasheet revision status and ordering suffixes match specific requirements. Ensure storage conditions adhere to moisture sensitivity levels. Validate that the PowerSO-10RF straight lead package aligns with PCB footprint designs before finalizing procurement orders.

Selection Notes

Select this component for designs requiring 6 W output power at approximately 945 MHz. Ensure the circuit supports a 28 V supply and provides adequate thermal management given the 5 °C/W junction-to-case resistance. Verify impedance matching networks against the provided input and load impedance data for optimal gain and efficiency at target frequencies.

Part Context

The PD57006S belongs to the PD57006-E series within STMicroelectronics' LdmoST Plastic Family. It shares core electrical characteristics with the PD57006 but differs in physical packaging. While the PD57006 uses formed leads, the PD57006S features straight leads in the PowerSO-10RF package. Both are N-channel lateral MOSFETs optimized for RF power applications.

Replacement Considerations

The PD57006 serves as a direct functional substitute with identical electrical ratings. However, mechanical compatibility requires verification due to the difference between straight leads (PD57006S) and formed leads (PD57006). Review PCB footprint dimensions and mounting recommendations in application note AN1294 before substitution.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 165 °C.

How does the PD57006S differ from the PD57006?

The primary difference is the lead style; the PD57006S has straight leads, while the PD57006 has formed (gull-wing) leads. Electrical specifications remain identical.

What is the typical power gain at 945 MHz?

The typical power gain is 15 dB when operating at 28 V with 70 mA bias current and 6 W output power.