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The PD57018-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST plastic family. Designed for high gain and broad band commercial and industrial applications, it operates at 28 V in common source mode at frequencies up to 1 GHz. Key electrical parameters include a maximum output power of 18 W with 16.5 dB gain at 945 MHz/28 V. The device features a PowerSO-10RF package with an exposed bottom pad, rated for a continuous drain current of 2.5 A and a power dissipation of 31.7 W. It supports a supply voltage of 28 V and has a gate-source voltage rating of 20 V.
Verify the specific ordering suffix to confirm packaging type, as tube and reel variants exist within the product line. Confirm RoHS compliance status and Ecopack2 designation during procurement. Ensure the requested quantity matches the manufacturer's standard packing unit to avoid partial shipment issues or unnecessary handling fees.
Select this component when designing circuits requiring 18 W output power at 28 V bias. Verify that the application frequency falls within the 1 GHz operational range. Ensure the PCB layout accommodates the PowerSO-10RF package dimensions and provides adequate thermal grounding through the exposed bottom pad for optimal heat dissipation.
This transistor belongs to the STMicroelectronics LdmoST plastic family of lateral MOSFETs. It is often used in conjunction with other devices like the PD57002-E and PD57060-E in multi-stage amplifier designs. The part is distinct from the tape-and-reel variant PD57018TR-E and the slightly different package version PD57018S-E.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official STMicroelectronics replacement guides for equivalent lateral MOSFETs if this specific part number becomes unavailable.