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The PD57018 is a common source N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST Plastic Family. It operates at 28 V in common source mode at frequencies up to 1 GHz. Key electrical specifications include a drain-source breakdown voltage of 65 V, continuous drain current of 2.5 A, and maximum junction temperature of 165 °C. At 945 MHz with 28 V supply and 100 mA bias current, it delivers 18 W output power with 16.5 dB gain and 53% drain efficiency. The device utilizes the PowerSO-10RF plastic package.
Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm part number suffixes (e.g., -E) match specific packaging requirements such as tube or tape and reel formats. Check for RoHS compliance status and ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet prior to assembly.
Select based on required output power and gain at target frequencies within the 1 GHz range. Ensure thermal management solutions can handle the 31.7 W power dissipation rating at 70°C case temperature. Verify impedance matching networks align with typical input and drain load impedances provided for 925 MHz, 945 MHz, and 960 MHz operation points.
The PD57018 belongs to STMicroelectronics' LdmoST Plastic Family of N-channel enhancement-mode lateral MOSFETs. It is designed for high reliability and ease of assembly using the first true SMD plastic RF power package, PowerSO-10RF. This family targets broadband commercial and industrial RF power amplifier designs requiring superior linearity and performance.
PD57018S-E serves as a variant with straight leads instead of formed leads, maintaining identical electrical characteristics within the same PowerSO-10RF package family.