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The PD57018S is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST Plastic Family. It operates at 28V in common source mode up to 1 GHz, delivering 18W output power with 16.5dB gain at 945 MHz. Key electrical parameters include a drain-source voltage of 65V, continuous drain current of 2.5A, and on-resistance of 760 mOhms. The device features a maximum junction temperature of 165°C and thermal resistance of 3.0 °C/W. It utilizes the PowerSO-10RF-Straight-4 package.
Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm RoHS compliance status via Ecopack2 documentation. Check datasheet revision history for updates. Ensure storage conditions respect humidity sensitivity requirements. Validate ordering suffixes against manufacturer specifications before procurement.
Select based on required operating frequency up to 1 GHz and 28V supply voltage. Consider the 16.5 dB gain and 18 W output power capabilities at 945 MHz. Evaluate thermal management needs given the 3.0 °C/W junction-to-case resistance. Verify compatibility with the PowerSO-10RF-Straight-4 surface mount footprint for PCB layout.
This component belongs to the PD57018-E series of RF power transistors. It shares core electrical characteristics with the PD57018 but differs in lead configuration. The PD57018 uses formed leads while the PD57018S utilizes straight leads within the same PowerSO-10RF plastic package family.
PD57018 serves as a direct functional substitute with identical electrical specifications. The primary difference lies in the lead style: PD57018 uses formed leads whereas PD57018S uses straight leads. Both utilize the PowerSO-10RF package.